Chemical vapor deposition method of a noble metal compound thin film and a noble metal thin film and method for producing an organic metal compound of chemical vapor deposition and metal organic compounds of the chemical vapor deposition

摘要

PROBLEM TO BE SOLVED: To obtain an organometallic compound for chemical vapor deposition, having excellent characteristics as a CVD raw material which a conventional bis(ethylcyclopentadienyl)ruthenium and ethylcyclopentadienyl(1,5-cyclooctadiene) indium have and high stability to oxygen.;SOLUTION: This organometallic compound is useful for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method and is an alkylcyclopentadienyl(cyclopentadienyl)ruthenium substituted with an n-butyl group, an iso-butyl group or a tert-butyl group). This organometallic compound is useful for producing an indium thin film or an indium oxide thin film by a chemical vapor deposition method and is an organometallic compound for a chemical vapor deposition composed of an alkylcyclopentadienyl(1,5-cyclooctadiene)indium substituted with any alkyl group of an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group and a tert-butyl group.;COPYRIGHT: (C)2002,JPO