Laser Annealing of Ion Implanted Semiconductors

摘要

Contents: Raman Spectroscopy of Amorphous GaAs Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcrystallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.