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LASER ANNEALING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LASER ANNEALING METHOD, CONTROL DEVICE OF LASER ANNEALING APPARATUS, AND LASER ANNEALING APPARATUS
LASER ANNEALING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LASER ANNEALING METHOD, CONTROL DEVICE OF LASER ANNEALING APPARATUS, AND LASER ANNEALING APPARATUS
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机译:激光退火方法,用于半导体器件,半导体器件,激光退火方法,激光退火装置的控制装置和激光退火装置
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摘要
A laser annealing method for a semiconductor device, includes: a first step of adding an impurity to a semiconductor substrate; and a second step of irradiating a region to which the impurity is added with a pulsed laser beam a plurality of times to anneal the semiconductor substrate. In the second step, a first region of a portion of the region to which the impurity is added is irradiated with the pulsed laser beam, and after a predetermined time interval, a second region adjacent to the first region is irradiated with the pulsed laser beam. The predetermined time interval is larger than a pulse interval of the pulsed laser beam.
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