Simulation of Single Radiation Particle Tracks in Silicon and Gallium Arsenide Semiconductor Devices

摘要

The transient response of a variety of semiconductor devices, of both silicon and gallium arsenide, following a strike by a single ionizing particle is computed using a two dimensional, drift and diffusion simulation code. The devices considered include a simple silicon diode, a silicon bipolar structure, gallium arsenide JFET;s, and MESFET'S, and a silicon CMOS device. The results of the study show that the funneling effect seen in diodes, while present in many of the simulations, play a minor role in describing the transient which present in many of the simulations. The current paths which develop following a single particle strike are as, or more, complex than those which exist during normal device operation. The CMOS results also indicate a potential for single particle induced latchup. The complexity of the results, and the approximation required for two dimensional simulation also provide further support for the need of full, three dimensional simulations of such events.