Self-organization of nanoislands on the surface of silicon and gallium arsenide single crystals stimulated by spatially periodic laser radiation fields

摘要

Four interfering laser beams acting upon the surface of silicon and gallium arsenide single crystals stimulate the self-organization of nanoislands, which is manifested by the development of processes controlling the size of islands in a two-dimensional periodic structure formed on the sample surface. The influence of the polarization of interfering beams on the character of this self-organization has been studied. Islands with lateral dimensions from 60 to 100 nm and a height of 6-12 nm have been obtained. The lateral dimensions of nanoislands are 5-10 times smaller than the period of a standing wave of the laser radiation field, which is explained by the influence of elastic stresses developed at the crystal surface. (C) 2005 Pleiades Publishing, Inc.