Multiscale Simulation Models for Transient Radiation Effects with 3D Ionizing Tracks in Semiconductor Nanodevices

摘要

Multiscale simulation models are presented to allow for accurate simulation of transient radiation effects with 3D ionizing tracks in semiconductor nanodevices. These models are implemented in the new CFDRC mixed-mode simulator, which combines multiscale 3D Technology Computer-Aided Design (TCAD) device models (drift-diffusion-based carrier transport and nuclear ion track impact) and advanced compact transistor models. Three-dimensional adaptive mesh generation has been developed and used for simulations of single-event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt's MRED tools with the use of the Geant4 library.