Mathematical Simulation of the Effects of Ionizing Radiation on Semiconductors

摘要

The report outlines results of two-dimensional mathematical investigations initiated during the present contract period: the insulated gate field-effect transistor, The Schottky barrier field-effect transistor and the bipolar transistor. In addition, information is presented on the mathematical technique used to solve these semiconductor device problems. A discussion is presented on a newly developed method for numerically solving the two-dimensional ambipolar diffusion equations for holes and electrons in semiconductor material. All numerical computations of this type use underrelaxation as a means to attain computational stability; the present discussion outlines the automation of this underrelaxation process whereby all device calculations can be performed on a 'hands-off' basis. Another new aspect of this computational method is the adoption of a formulation that provides rapid convergence of the calculated electric current in investigations of semiconductor devices. (Author)