Influence of Ionizing Radiations and Electrical Overstressings on MOS (Metal-Oxide Semiconductors) Devices: A Comparison

摘要

Primary mode of failure and/or degradation of MOSFETs due to oxide charge and surface effects can result either from ionizing radiations or from electrical overstressings. In either case, the resulting damage can be characterized by a global parametric degradation specified in terms of device noise characteristics. That is, the net effect of charge trapping and the associated occupation of surface states can be viewed as random/fluctuation phenomena which manifest as the device noise. Thus a common noise model can be prescribed to represent tha analogous influence of ionizing radiations and electrical overstressings. Relevant theoretical results and measured data are presented. Keywords: Mosfet semiconductors; Radiation damage.