Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Faculty of Electrical Engineering and Computer Science, VSB - Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava-Poruba, Czech Republic;
Random access memory; EPROM; Field programmable gate arrays; Ionizing radiation; Radiation effects; Semiconductor memory; Testing;
机译:电离辐射对金属铁电绝缘体半导体存储电容器的影响
机译:电离辐射和热载流子注入对金属氧化物半导体晶体管的影响
机译:电离辐射对III-V半导体化合物的电子和光电性能的影响
机译:电离辐射影响下半导体存储器的实时分析
机译:电离辐射对纳米材料和III-V半导体器件的影响。
机译:基于半导体纳米材料的荧光光谱和基质辅助激光解吸/电离(MALDI)质谱法进行蛋白质组分析
机译:带间碰撞电离和太赫兹的非线性吸收 半导体异质结构中的辐射
机译:电离辐射和电过载对mOs(金属氧化物半导体)器件的影响:比较