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Production of a semiconductor radiation detector for detecting electromagnetic radiation and ionized particulate radiation comprises applying at least one semiconductor layer on at least one main surface by epitaxial growth
Production of a semiconductor radiation detector for detecting electromagnetic radiation and ionized particulate radiation comprises applying at least one semiconductor layer on at least one main surface by epitaxial growth
Production of a semiconductor radiation detector comprises applying at least one semiconductor layer on at least one main surface by epitaxial growth. An independent claim is also included for a semiconductor radiation detector produced by the above process.
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