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GaAs Heterojunction Device Based A/D (Progress Report Number 11, April 1-30, 1988).

机译:基于Gaas异质结器件的a / D(进展报告编号11,1988年4月1日至30日)。

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The first new ADC lot has completed processing and has been shipped to Hughes for evaluation. This lot was processed on a hot lot status to complete it prior to the DARPA review. We made several compromises during the process to expedite the lot, knowing full well that these compromises could jeopardize the functionality of the chips. While the hot lot status did result in the lot being completed prior to the review, only partially functional S/H circuits were obtained, as described below. The major problem associated with this lot was low transistor current gains. Two follow-up lots being processed slightly behind this lead lot also exhibit low current gains. These two lots will be completed during May and shipped to Hughes for evaluation.

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