p+-AlInAs/InP Junction FET's (Field-Effect Transistors) by Selective Molecular Beam Epitaxy

摘要

Indium Phosphide field-effect transistors (FET's) are promising candidates for a variety of microwave and millimeter-wave applications. InP possesses a higher peak electron velocity and a higher thermal conductivity than GaAs as well as being able to withstand higher electric fields. Because of these material property differences, FET's based on the InP materials system should be capable of providing higher output power and operating at higher frequencies than similar GaAs devices. In this letter, we report the characteristics of InP JFET's that consist of a Si(+)-implanted channel layer and a p(+) gate layer that is formed by selective molecular-beam epitaxy (MBE) of lattice-matched Be-doped Al(0.52)In(0.48)As. Current-voltage measurements on 4.0 micrometer gate-length devices show a zero-gate-bias transconductance of 41 mS/mm, and RF measurements indicate a unity-power-gain frequency f(max) of 3.2 GHz. These results indicate that the selective growth method is a viable technique for fabricating high-frequency, high-power junction FET's in the InP-based materials system. Reprints. (AW)