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Performance Characteristics of In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors Realized by Two-Step Epitaxy: Effects of Molecular-Beam Epitaxial Regrowth

机译：In（0.53）Ga（0.47）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管的两步外延实现的性能特征：分子束外延再生的影响

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Lai, R.; Bhattacharya, P. K.;
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年度 1990
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总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Optical circuits; Field effect transistors; Electrooptics; Epitaxial growth; Reprints;

机译：光学电路;场效应晶体管;电光学;外延生长;重印;

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1. Backgating studies in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors [J] . Hong W.-P., Bhattacharya P.K. IEEE Transactions on Electron Devices . 1988,第1期

机译：In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.52 / Al / sub 0.48 / As调制掺杂场效应晶体管中的背射研究
2. Optical tuning of monolithic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistor oscillators at X and R band [J] . Lai R., Bhattacharya P.K. Electronics Letters . 1991,第12期

机译：在X和R波段对In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.52 / Al / sub 0.48 / As / InP调制掺杂的场效应晶体管振荡器进行单片光学调谐
3. Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures [J] . Lai R., Bhattacharya P.K. IEEE Transactions on Electron Devices . 1992,第10期

机译：栅极长度为0.8 / 0.2μm的特性In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As / InP（0.53> or = x> or = 0.70）调制低温下掺杂的场效应晶体管
4. Long wavelength, wide spectral response (0.8-1.8µm) Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes and Al0.48In0.52As electroabsorption PIN avalanche detectors grown by molecular beam epitaxy [C] . Capasso F., Alavi K., Cho A.Y., Electron Devices Meeting, 1983 International . -1

机译：长波长，宽光谱响应（0.8-1.8μm）Al 0.48 In 0.52 As / Ga 0.47 In 0.53 分子束外延生长作为雪崩光电二极管和Al 0.48 In 0.52 作为电吸收PIN雪崩探测器
5. Molecular-beam epitaxial growth and characterization of aluminum gallium arsenide/indium gallium arsenide single quantum-well modulation-doped field-effect transistor structures. [D] . Radulescu, David Constantine. 1988

机译：砷化铝镓/砷化铟镓单量子阱调制掺杂的场效应晶体管结构的分子束外延生长和表征。
6. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics [O] . Sungho Choi, Youngseo An, Changmin Lee, -1

机译：H2高压退火对HfO2 / Al2O3 / In0.53Ga0.47As电容器的影响：化学成分和电特性
7. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes [O] . J. Pamulapati, R. Lai, G. I. Ng, 1990

机译：Pseudomorphic IN0.53 + XGA0.47-XAS / IN0.52AL0.48AS（0≤x≤0.32）调制掺杂场效应晶体管的关系与分子束外延生长模式的性能特征
8. Relation of the Performance Characteristics of Pseudomorphic In(0.53+x)Ga(0.47-x)As/In(0.52)Al(0.48)As (0< or =x< or =0.32) Modulation-Doped Field-Effect Transistors to Molecular-Beam Epitaxial Growth Modes [R] . Pamulapati, J., Lai, R., Ng, G. I., 1990

机译：假晶In（0.53 + x）Ga（0.47-x）as / In（0.52）al（0.48）as（0 <或= x <或= 0.32）调制掺杂场效应晶体管的性能特征与分子的关系-Beam外延生长模式

Performance Characteristics of In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors Realized by Two-Step Epitaxy: Effects of Molecular-Beam Epitaxial Regrowth

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