Techniques for Investigating Thin-Film Insulators Under High Electric Fields

摘要

Techniques developed to investigate thin-film metal-insulator-metal devicesoperating under high electric fields are described. Typically, the insulator will be a wide band-gap, optically active material with device applications including displays and electro-optic components. Emphasis is placed on techniques to cope with the common problems of non-uniform conduction and dielectric breakdown. Techniques are described for the measurement, in near real time, of both the electrical characteristics and the optical spectral response. Reference is made to the behaviour of the ZnS:Mn electroluminescent system to illustrate the techniques described. (rh)