COMPOSITION FOR THIN-FILM CAPACITOR DEVICE, HIGH DIELECTRIC CONSTANT INSULATOR FILM, THIN-FILM CAPACITOR DEVICE, THIN-FILM MULTILAYER CAPACITOR, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE

摘要

A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.