首页> 外文OA文献 >Organic molecular crystals: from thin-films to devices : investigation of thin-film formation and electronic transport properties of polycrystalline perylene films
【2h】

Organic molecular crystals: from thin-films to devices : investigation of thin-film formation and electronic transport properties of polycrystalline perylene films

机译:有机分子晶体:从薄膜到器件:多晶per膜的薄膜形成和电子传输性能研究

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

When Bardeen, Shockley and Brattain produced the first prototype transistor in 1947 no one could have imagined the invention's impact on today's life. It was the advances in thin-film technology which paved the way for the transistor to wide range applicability. Organic semiconductors have been subject to research since the early 1960s. In the mid 1980s, the research on organic semiconductors took another leap forward when Karl, Warta and Stehle published their research on ultrapure, high mobility organic photoconductors and on charge carrier transport in organic conductors. Organic electronics have entered everyday life as organic light-emitting diodes (OLEDs) can nowadays be found in a variety of applications. While OLEDs have accomplished the step from basic research to market readiness with sales exceeding $ 1B/yr in 2008, organic thin-film transistors (OTFTs) still lag behind. Nevertheless they are intensively studied as the material of choice in active matrix devices for flexible displays. One of the reasons for the absence of commercial OTFT applications is their slow switching speed due to low charge carrier mobility. The application of so-called dielectric surface modification (DSM) is one pathway towards high performance thin-film OTFTs. DSMs, which are based on organic molecules forming self-assembling monolayers or polymeric dielectrics, are studied due to their huge impact on OTFT device performance and on the film perfection of organic semiconductor thin-films. The appropriate choice of DSMs enables the combination of an arbitrary organic semiconductor with any substrate materials. Hence, the key factor to high performance and film perfection is the educated choice of thin and easily applicable DSM. However, the reason for the performance enhancement is not yet understood. This hinders the development of DSMs for high performance OTFTs. In this thesis two systematic approaches will be presented. DSMs were chosen by knowledge, which means that suitable DSMs were identified by a knowledge driven process. In addition, novel dielectrics were designed and synthesized specifically for this thesis. In case of DSMs chosen by knowledge, we were able to show that different DSMs can be classified into three types: low adhesion DSMs, high adhesion DSMs and intermediate DSMs. Perlyene films produced on low adhesion DSMs grow in highly textured films with large grains while perylene films produced on high adhesion DSMs show a perturbed growth mode which leads to an inferior film quality. The film quality of perylene films grown on intermediate DSMs lies between these two extremes. Furthermore, the measurements show that perylene OTFTs based on low adhesion DSMs outperform all other perylene based OTFTs. The application of novel dielectrics, based on derivates of tridecyltrichlorosilane (TTS) with different functional end-groups aimed at the specific tailoring of the adhesion energy, which is assumed to be the major factor in producing high performance OTFTs. The experiments confirm the importance of an educated choice of an appropriate DSM. We were able to tailor the adhesion energy of perylene molecules on a substrate by the application of deliberately designed DSMs. It was confirmed that perylene based OTFTs on carefully chosen DSMs outperform TFTs without DSM in terms of charge carrier mobility and film quality. This is indicative for an influence of the DSMs on the trap-state distribution and on the thin-film formation process. Both influences were investigated in detail. In case of the thin-film formation process, the influence of DSMs on film perfection was unraveled. We were able to show that the difference in adhesion energy for different DSMs influences the diffusivity. This is also influencing the island density and hence the film perfection. Furthermore, the influence of the balance between adhesion and cohesive energy on the growth of the first monolayers was demonstrated. The influence of DSMs on the trap-state distribution at the DSM/organic interface was investigated in detail. To explain all observed time- and temperature dependent effects in perylene TFTs, a model was developed that predicts the existence of states in the vicinity of the perylene HOMO level that need energy in order to be filled and in order to be emptied. By the application of a novel variation of temperature stimulated current (TSC) we were able to confirm the existence of this energy level. It was shown that the existence of trap states has a huge impact on charge carrier transport and in turn on device performance and that different DSMs lead to a different trap state density and distribution.
机译:当Bardeen,Shockley和Brattain在1947年生产出第一个原型晶体管时,没有人能想到该发明对当今生活的影响。薄膜技术的进步为晶体管的广泛应用铺平了道路。自1960年代初以来,有机半导体一直受到研究。在1980年代中期,Karl,Warta和Stehle发表了有关超纯,高迁移率有机光电导体和有机导体中载流子传输的研究,有机半导体的研究又向前迈进了一步。有机电子已进入日常生活,因为有机发光二极管(OLED)如今可在各种应用中找到。尽管OLED已完成从基础研究到市场准入的步伐,2008年的年销售额超过10亿美元,但有机薄膜晶体管(OTFT)仍然落后。然而,它们已经作为柔性显示器的有源矩阵设备中选择的材料进行了深入研究。缺乏商用OTFT应用的原因之一是由于低的载流子迁移率导致它们的开关速度慢。所谓的介电表面改性(DSM)的应用是通向高性能薄膜OTFT的一种途径。由于DSM会对OTFT器件的性能和有机半导体薄膜的成膜性产生巨大影响,因此对基于有机分子形成自组装单层或聚合物电介质的DSM进行了研究。 DSM的适当选择可以将任意有机半导体与任何衬底材料组合在一起。因此,高性能和薄膜完美的关键因素是对薄且易于应用的DSM的明智选择。但是,性能提高的原因尚不清楚。这阻碍了用于高性能OTFT的DSM的开发。本文将介绍两种系统的方法。 DSM是通过知识选择的,这意味着合适的DSM通过知识驱动的过程来识别。此外,针对该论文设计并合成了新型电介质。在通过知识选择DSM的情况下,我们能够证明不同的DSM可以分为三种类型:低粘附力DSM,高粘附力DSM和中间DSM。在低粘附力DSM上生产的ly膜在具有大晶粒的高度织构的膜中生长,而在高粘附力DSM上生产的per膜显示出受干扰的生长模式,这会导致膜质量下降。在中间DSM上生长的per膜的膜质量介于这两个极端之间。此外,测量结果表明,基于低粘附力DSM的per OTFT优于所有其他基于per的OTFT。基于具有不同官能端基的十三烷基三氯硅烷(TTS)衍生物的新型电介质的应用旨在特定地调节粘附能,这被认为是生产高性能OTFT的主要因素。实验证实了适当选择DSM的明智选择的重要性。通过精心设计的DSM,我们能够定制per分子在基材上的粘附能。可以肯定的是,在精心选择的DSM上,基于charge的OTFT在载流子迁移率和薄膜质量方面优于没有DSM的TFT。这表明DSM对陷阱态分布和薄膜形成过程的影响。详细研究了这两种影响。在薄膜形成过程中,DSM对薄膜完美性的影响没有得到阐明。我们能够证明不同DSM的粘附能差异会影响扩散率。这也影响岛的密度,从而影响胶卷的完美度。此外,证明了粘附力和内聚能之间的平衡对第一单层的生长的影响。详细研究了DSMs对DSM /有机界面上陷阱态分布的影响。为了解释在observed TFT中观察到的所有随时间和温度的影响,开发了一个模型,该模型预测了HO HOMO能级附近需要存在能量才能被填充和清空的状态的存在。通过应用新型的温度激发电流(TSC)变化,我们能够确认该能级的存在。结果表明,陷阱态的存在对电荷载流子传输产生了巨大影响,进而对器件性能产生了巨大影响,而且不同的DSM会导致陷阱态密度和分布不同。

著录项

  • 作者

    Effertz Christian;

  • 作者单位
  • 年度 2011
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号