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Fluorocarbon-Modified Organic Semiconductors:Molecular Architecture,Electronic,and Crystal Structure Tuning of Arene-versus Fluoroarene-Thiophene Oligomer Thin-Film Properties

机译:氟碳改性的有机半导体:芳烃与氟芳烃-噻吩低聚物的薄膜结构,分子结构,电子学和晶体结构调整

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摘要

We present here the systematic synthesis and comparative physicochemical characterization of a series of regiochemically varied and core size extension-modulated arene(perfluoroarene)-thiophene oligomers.The molecules investigated are:5,5"-diphenyl-2,2':5',2":5",2'''-quaterthiophene (1),5,5'-bis-{1-[4-(thien-2-yl)phenyl]}-2,2'-dithiophene (2),4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3),5,5"-diperfluo-rophenyl-2,2':5',2":5",2'"-quaterthiophene (4),5,5'-bis{ 1 -[4-(thien-2-yl)perfluorophenyl]}-2,2'-dithiophene (5),4,4'-bis[5-(2,2'-dithiophenyl)]-perfluorobiphenyl (6),5,5"-diperfluorophenyl-2,2':5',2"-tertthiophene (7),5,5'-diperfluorophenyl-2,2'-dihiophene (8),and 5,5-diperfluorophenylthiophene (9).Trends in optical absorption and emission parameters,molecular structures as defined by single-crystal X-ray diffraction,as well as electrochemical redox processes are described.The morphologies and microstructures of the vapor-deposited films grown over a range of growth temperatures have also been characterized.Field-effect transistor (FET)measurements demonstrate that all of these materials are FET-active and,depending on the molecular architecture,exhibit comparably good p-or n-type mobility when optimum film microstructural order is achieved.A very large n-channel mobility of approx0.5 cm~2/Vs with I_(on)/I_(off)ratios > 10~8 is achieved for films of 4.
机译:我们在这里介绍一系列区域化学变化和核心尺寸扩展调节的芳烃(全氟芳烃)-噻吩低聚物的系统合成和比较理化性质。研究的分子为:5,5“-联苯-2,2':5', 2“:5”,2“'-四噻吩(1),5,5'-双-{1- [4-(噻吩-2-基)苯基]}-2,2'-二噻吩(2), 4,4'-双[5-(2,2'-二硫代苯基)]-联苯(3),5,5“ -diperfluo-rophenyl-2,2':5',2”:5“,2'” -四噻吩(4),5,5'-bis {1-[4-(噻吩-2-基)全氟苯基]}-2,2'-二噻吩(5),4,4'-bis [5-(2 ,2'-二硫代苯基)]-全氟联苯(6),5,5“-二全氟苯基-2,2':5',2”-叔噻吩(7),5,5'-二全氟苯基-2,2'-二噻吩( 8)和5,5-二全氟苯基噻吩(9)。描述了光吸收和发射参数的趋势,单晶X射线衍射定义的分子结构以及电化学氧化还原过程。蒸气的形态和微观结构在一定的生长温度范围内生长的铝沉积膜场效应晶体管(FET)的测量表明,所有这些材料都是FET活性的,并且取决于分子结构,当达到最佳薄膜微结构顺序时,它们表现出相当好的p或n型迁移率。对于胶片4的I_(on)/ I_(off)比率​​> 10〜8,可实现约0.5 cm〜2 / Vs的大n沟道迁移率。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2006年第17期|p.5792-5801|共10页
  • 作者单位

    Contribution from the Department of Chemistry and the Materials Research Center,Northwestern University,2145 Sheridan Road,Evanston,Illinois,60208;

    Contribution from the Department of Chemistry and the Materials Research Center,Northwestern University,2145 Sheridan Road,Evanston,Illinois,60208;

    Contribution from the Department of Chemistry and the Materials Research Center,Northwestern University,2145 Sheridan Road,Evanston,Illinois,60208;

    Contribution from the Department of Chemistry and the Materials Research Center,Northwestern University,2145 Sheridan Road,Evanston,Illinois,60208;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

  • 入库时间 2022-08-18 03:22:39

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