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Sub-100 nm Electronic Device and Quantum-Effects Research Using X-RayNanolithography

机译:使用X射线透视纳米技术的亚100nm电子器件和量子效应研究

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Two major categories of electronics research make use of sub-100 nm features:scaling of conventional devices such as transistors, and quantum-effect studies. Nearly all researchers in these two fields use only a scanning-electron-beam for lithography, although it is widely acknowledged that at sub-100 nm linewidths this approach has low process latitude, and throughput is insufficient for eventual practical applications. X-ray nanolithography not only provides high throughput but also has significant virtues in research: large process latitude, precise linewidth control, absence of backscattering, exposure that is independent of substrate type or topography, low substrate damage, large coherent exposure fields, insensitivity to dust and contamination, and the ability to combine, on the same mask, patterns made by a variety of processes. The status of x-ray nanolithography is reviewed, and its efficacy illustrated via results of short-channel and quantum-effect-electronics research. X-ray nanolithography can be extended down to the currently perceived limits of the lithographic process, approx. 10 nm. Keywords: Reprints; X rays; Lithography; Electric reactors. (cp)

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