Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

摘要

For future devices in metal oxide semiconductor technology there is a great interest in down scaling of device di- mensions to improve device performance and to increase packing density. New device designs with nonuniform channel doping profiles are investigated to further enhance performance over conventional device designs and to suppress short channel effects. In this work we report sub-100 nm MOS devices with channel delta doping profiler grown using molecular beam epitaxy. Electrical characteristics and carrier transport in these devices are investigated and show significant improvements compared to conventional devices. Sharp channel profiles facilitate control of electric field and this "field engineering" improve the breakdown characteristics and provide better control of threshold voltage.