Long-Wavelength Ge(x)Si(1-x)/Si Heterojunction Infrared Detectors and 400 X 400-Element Imager Arrays

摘要

The most highly developed technology currently available for large-area staringinfrared focal plane arrays utilizes silicide Schottky-barrier detectors even though these internal-photoemission detectors have much lower quantum efficiencies than those based on interband absorption in semiconductors such as InSb and HgCdTe. The advantage of the silicide detectors is that they are fabricated on Si substrates by standard integrated circuit processing techniques. Therefore, it is possible to manufacture large, highly uniform arrays of detectors that are monolithically integrated with CCD or MOS readout circuitry. Extension of the photoresponse into the long-wavelength infrared (LWIR) spectral band, ranging from 8 to 14 micrometers, has been demonstrated for IrSi arrays.