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Infrared detector array, infrared imaging device using the same, and method of manufacturing infrared detector array

机译:红外探测器阵列,使用其的红外成像装置及其制造方法

摘要

To provide an infrared detector array of a two-wavelength type, which reduces a pixel size and has a high connection reliability, and a manufacturing method thereof.SOLUTION: An infrared detector array in which a plurality of pixels 1 separated with a pixel separation groove 2 is two-dimensionally arranged, includes a laminate body in which a lower part contact layer, a lower activate layer having a sensitivity to a first wavelength of an infrared band, an intermediate contact layer 13, an upper activate layer having a sensitivity to a second wavelength different from the first wavelength in the infrared band, an upper contact layer 15 and an insulation layer are laminated in this order on an insulation semiconductor substrate. Each of the plurality of pixels includes: a first contact hole 31 that reaches the intermediate contact layer arranged near the first corner; and a single bump electrode 9 that is off-set to a direction toward a diagonal corner of the first corner from a center of each pixel and is arranged.SELECTED DRAWING: Figure 3
机译:提供一种减小像素尺寸并具有高连接可靠性的两波长型红外检测器阵列及其制造方法。解决方案:一种红外检测器阵列,其中多个像素1被像素分离槽分离。图2是二维布置的,包括层压体,其中下部接触层,对红外波段的第一波长具有敏感性的下部活化层,中间接触层13,对红外光谱具有敏感性的上部活化层。与红外波段中的第一波长不同的第二波长,上接触层15和绝缘层以此顺序层叠在绝缘半导体衬底上。多个像素中的每一个包括:第一接触孔31,其到达布置在第一拐角附近的中间接触层;以及第二接触孔。布置有单个凸块电极9,该凸块电极9从每个像素的中心向第一角的对角线偏移。

著录项

  • 公开/公告号JP2019009355A

    专利类型

  • 公开/公告日2019-01-17

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20170125548

  • 发明设计人 今 純一;尾▲崎▼ 一男;

    申请日2017-06-27

  • 分类号H01L31/10;

  • 国家 JP

  • 入库时间 2022-08-21 12:22:35

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