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Infrared detector array, infrared imaging device using the same, and method of manufacturing infrared detector array
Infrared detector array, infrared imaging device using the same, and method of manufacturing infrared detector array
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机译:红外探测器阵列,使用其的红外成像装置及其制造方法
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摘要
To provide an infrared detector array of a two-wavelength type, which reduces a pixel size and has a high connection reliability, and a manufacturing method thereof.SOLUTION: An infrared detector array in which a plurality of pixels 1 separated with a pixel separation groove 2 is two-dimensionally arranged, includes a laminate body in which a lower part contact layer, a lower activate layer having a sensitivity to a first wavelength of an infrared band, an intermediate contact layer 13, an upper activate layer having a sensitivity to a second wavelength different from the first wavelength in the infrared band, an upper contact layer 15 and an insulation layer are laminated in this order on an insulation semiconductor substrate. Each of the plurality of pixels includes: a first contact hole 31 that reaches the intermediate contact layer arranged near the first corner; and a single bump electrode 9 that is off-set to a direction toward a diagonal corner of the first corner from a center of each pixel and is arranged.SELECTED DRAWING: Figure 3
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