Epitaxial Growth of Single Crystal Diamond on Silicon

摘要

We have performed a series of depositions on Si(100) surfaces using the hotfilament reactor. The depositions are fairly short in duration (75 minutes) so that the nucleation is observable. The deposition conditions are total pressure = 10 torr, T sub sub = 1000 C, T sub filament-1850 deg C, and 1% CH sub 4 in H sub 2. The surfaces are prepared using various combinations of scratching, degreasing, and spin etching. The scratching preparation uses 6 diamond paste. Unscratched Si(100) has virtually no nucleation after 75 minutes of deposition. This is not surprising since other researchers find that 10-17 hours of CVD is required to cover fully the SiC buffer layer on unscratched Si (%%116(Belton et al., 1989)%%). Future work will extend deposition times to 10 hours in the hot filament reactor and shorter times in the high growth torch reactor. By comparison, scratched Si(100) shows significant nucleation after 75 minutes of deposition.