Electron Transport Properties of Strained Si Layer on a Relaxed Si(1-x)Ge(x)Substrate by Monte Carlo Simulation

摘要

The in-plane transport properties of a strained (100) Si layer on a relaxed Sil-xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy delta E>O.1eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon delta E, and for delta E=0.4 eV, reaches 4.lXl07 cm/s at 300 K, and 5.2Xl07 cm/s at 77 K.