POLISHING METHOD OF A SEMICONDUCTOR WAFER INCLUDING STRAINED-RELAXED Si1-XGeX LAYER WITH HIGH GEOMETRIC SHAPE AND NANOTOPOLOGY PROPERTY

摘要

PURPOSE: A polishing method of a semiconductor wafer with a strained-relaxed Si1-XGeX layer is provided to removes the defect of a wafer surface by reducing the roughness after a mechanical precise abrasion.;CONSTITUTION: A Si1-xGex layer of a semiconductor wafer is mechanically processed using a polishing pad with an abrasive material inside a polishing apparatus. The abrasive material has a particle size less than 0.55um. The Si1-xGex layer of the semiconductor wafer processed mechanically supplies a polishing slurry including an abrasive and is processed chemically and mechanically using the polishing pad.;COPYRIGHT KIPO 2010