Monte Carlo Simulation of Hole Transport in Strained Si(1-x)Ge(x)

摘要

The transport properties of holes in Si(1-x)Ge(x) are studied with a Monte Carlotechnique. If the strain is applied to the Si(1-x)Ge(x) channel, it raises the degeneracy of the heavy-hole and light-hole hands: for compressive strain, the heavy-hole hand lies at a higher energy than the light-hole hand while for tensile strain, the order reverses, although it is technologically uncertain how to realize the tensile case at this stage. The transport properties are essentially the same for the unstrained and compressive cases, since most holes are in the heavy-hole hand over the entire field range of interest. Although the overshot is negligible, the hole velocity is still higher than that of Si, reflecting the excellent hole transport properties in Ge. In the tensile case, we