Low-Temperature Microwave Characteristics of 0.l microns Gate-LengthPseudomorphic In(0.52)Al(0.48) As/In(x)Ga(1-x)As (x = 0.85 and 0.95) MODFET's

摘要

Transmit/receive modules for space communication systems based on microwavemonolithic integrated circuit (MMIC) technology require high performance devices at cryogenic temperatures. Due to their temperature-dependent performance, the low temperature characteristics of FET' s must be measured for circuit design. A cryogenically-cooled FET amplifier has been demonstrated at 32 GHz and an associated gain of 26 dB was measured at 39 K. Moreover, low temperature characterization of GaAs-based MODFET's. MISFET's and MESFET's have been reported. jg p.2.