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Low-Temperature Microwave Characteristics of Pseudomorphic In(x)Ga(1-x)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors

机译：伪形In（x）Ga（1-x）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管的低温微波特性

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Lai, R.; Bhattacharya, P. K.; Alterovitz, S. A.; Downey, A. N.; Chorey, C.;
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年度 1990
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总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; Doping; Reprints;

机译：场效应晶体管;掺杂;重印;

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专利

1. Low-temperature microwave characteristics of pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors [J] . Lai R., Bhattacharya P.K. IEEE Electron Device Letters . 1990,第12期

机译：拟态In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As调制掺杂的场效应晶体管的低温微波特性
2. Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures [J] . Lai R., Bhattacharya P.K. IEEE Transactions on Electron Devices . 1992,第10期

机译：栅极长度为0.8 / 0.2μm的特性In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As / InP（0.53> or = x> or = 0.70）调制低温下掺杂的场效应晶体管
3. Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors [J] . Lai R., Bhattacharya P.K. Electronics Letters . 1991,第4期

机译：具有0.25μm栅极伪晶型In / sub 0.60 / Ga / sub 0.40 / As / In / sub 0.52 / Al / sub 0.48 / As / InP调制掺杂的场效应晶体管的单片集成平面前端光接收器
4. Some characteristics of mobility enhancement in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP high electron mobility transistor structures [C] . Yoon, S.F., Radhakrishnan, . 1996

机译：拟晶型In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As / InP高电子迁移率晶体管结构中迁移率增强的一些特性
5. Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications. [D] . Ng, Geok Ing. 1990

机译：应变的铟（0.52）铝（0.48）砷化物/铟（x）镓（1-x）砷化物（x大于0.53）高电子迁移率晶体管（HEMT），用于微波/毫米波应用。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes [O] . J. Pamulapati, R. Lai, G. I. Ng, 1990

机译：Pseudomorphic IN0.53 + XGA0.47-XAS / IN0.52AL0.48AS（0≤x≤0.32）调制掺杂场效应晶体管的关系与分子束外延生长模式的性能特征
8. Relation of the Performance Characteristics of Pseudomorphic In(0.53+x)Ga(0.47-x)As/In(0.52)Al(0.48)As (0< or =x< or =0.32) Modulation-Doped Field-Effect Transistors to Molecular-Beam Epitaxial Growth Modes [R] . Pamulapati, J., Lai, R., Ng, G. I., 1990

机译：假晶In（0.53 + x）Ga（0.47-x）as / In（0.52）al（0.48）as（0 <或= x <或= 0.32）调制掺杂场效应晶体管的性能特征与分子的关系-Beam外延生长模式

Low-Temperature Microwave Characteristics of Pseudomorphic In(x)Ga(1-x)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors

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