InAsSb/AlAsSb Double-Heterostructure Diode Lasers Emitting at 4 Micrometers

摘要

Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 microns have beenfabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperateres up to 80K and pulsed operation up to 155K The lowest threshold current density is 33 A/sq cm obtained at 50K but the characteristic temperature is only 17K. jg.