首页> 外国专利> Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode

Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode

机译:具有减小的器件电阻并且能够执行高输出操作的表面发射激光二极管,表面发射激光二极管阵列,电子照相系统,表面发射激光二极管模块,光通信系统,使用该表面发射激光二极管的光学互连系统以及表面发射激光二极管的制造方法

摘要

A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.
机译:提供了一种在垂直于基板的方向上振荡的表面发射激光二极管器件。该表面发射激光二极管器件包括:有源层;和一种谐振器结构,其包括彼此面对并且将有源层夹在中间的第一分布式布拉格反射器和第二分布式布拉格反射器。从第一电极延伸到有源层的空穴通道;从第二电极延伸到有源层的电子通道;空穴限制结构,其位于所述空穴通道中并限定用于将空穴限制在所述有源层上的区域;光学模式控制结构,其包括设置在谐振器结构中的非氧化物区域和围绕该非氧化物区域的氧化物区域,每个区域均包含Al作为构成元素。在该表面发射激光二极管中,非氧化物区域的面积小于空穴限制结构的面积。

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