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InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m

机译：InsSb / AlAsSb双异质结构和InsSb / InAlAs量子阱二极管激光器以/ spl sim / 4 / spl mu / m发射

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Studies InAsSb/AlAsSb double-heterostructure lasers emitting at 3.9 /spl mu/m which operated pulsed up to 170 K and CW up to 105 K, with CW power of 30 mW at 70 K. InAsSb/InAlAs quantum-well lasers emitting at 4.5 /spl mu/m operated pulsed up to 85 K.

机译：研究InAsSb / AlAsSb双异质结构激光器，其发射功率为3.9 / spl mu / m，脉冲工作频率高达170 K，CW高达105 K，CW功率在70 K时为30 mW。InAsSb / InAlAs量子阱激光器的发射功率为4.5 / spl mu / m脉冲最高可达85K。

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《》|1994年|P.28-29|共2页
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Choi; H.K.; Turner; G.W.;
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中图分类无线电电子学、电信技术;
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专利

1. InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition [J] . Wu D., Kaas E. IEEE Photonics Technology Letters . 1997,第2期

机译：通过金属有机化学气相沉积法生长的InAsSbP-InAsSb-InAs二极管激光器以3.2 / spl mu / m的速度发射
2. Fast tuning of 3.3 /spl mu/m InAsSb-InAsSbP diode lasers using nonlinear optical effects [J] . Danilova A.P., Imenkov A.N. IEE Proceedings. Part J . 1998,第5期

机译：利用非线性光学效应快速调谐3.3 / spl mu / m InAsSb-InAsSbP二极管激光器
3. High CW power (<200 mW/facet) at 3.4 /spl mu/m from InAsSb/InAlAsSb strained quantum well diode lasers [J] . Choi H.K., Turner G.W. Electronics Letters . 1996,第14期

机译：InAsSb / InAlAsSb应变量子阱二极管激光器的高CW功率（<200 mW /面）为3.4 / spl mu / m
4. InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m [C] . Choi H.K., Turner G.W., Institute of Electric and Electronic Engineer IEEE International Semiconductor Laser Conference . 1994

机译：INASSB / ALASSB双异质结构和INASSB / INALAS量子阱二极管激光器AT / SPL SIM / 4 / SPL MU / M.
5. Vertical-cavity surface-emitting lasers with an interactivity quantum-well absorber: Design and applications. [D] . Lim, Sui F. 1998

机译：具有交互式量子阱吸收器的垂直腔面发射激光器：设计和应用。
6. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures [O] . Shuxin Tan, Jicai Zhang, Takashi Egawa, 2018

机译：量子阱宽度对AlGaN深紫外发光二极管在不同温度下的电致发光性能的影响
7. Wavelength-tunable short-pulse diode-laser fiber-amplifier system around 1.06 /spl mu/m [O] . Adhimoolam Balaji, Hekelaar Mathijs G., Gross Petra, 2006

机译：波长可调的短脉冲二极管激光光纤放大器系统约为1.06 / spl mu / m
8. InAsSb/AlAsSb Double-Heterostructure Diode Lasers Emitting at 4 Micrometers [R] . Eglash, S. J., Choi, H. K. 1995

机译：Inassb / alassb双异质结构二极管激光器以4千分尺发光

InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m

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