InAsSb Light Emitting DiodesA b s t r a c tA light emitting diode characterized by a doped p-njunction grown on a semiconductor substrate, saiddoped p-n junction consisting of a bulk InAs1-xSbxlayer doped with beryllium as p-doping element andsilicum as n-doping element, wherein the compositionalparameter x is set to a value comprised in the rangefrom 0 to 1 thereby to define the wavelength of theemitted light when the structure is activated.
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