InAsSb light emitting diodes

摘要

A light emitting diode characterized by a doped p-n junction grown on a semiconductor substrate, said doped p-n junction consisting of a bulk InAs1-xSbx layer doped with beryllium as p-doping element and silicum as n-doping element, wherein the compositional parameter x is set to a value comprised in the range from 0 to 1 thereby to define the wavelength of the emitted light when the structure is activated.