3.9-micrometers InAsSb/AlAsSb Double-Heterostructure Diode Lasers with HighOutput Power and Improved Temperature Characteristics

摘要

Double heterostructure diode lasers emitting at approx. 3.9 micrometer haveexhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/sq cm obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range.