...
首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures
【24h】

Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures

机译:栅GaAs / AlGaAs异质结构中电子的输运和量子寿命依赖性

获取原文
获取原文并翻译 | 示例

摘要

We present a study of the transport and quantum lifetime dependence on electron density in two completely different kinds of two-dimensional electron gas systems. We observed that both the two scattering time increase with increasing the electron density. But the ratios of the transport to the quantum lifetime have different tendency with the electron density, which do not conform to the conventional theory. We speculate that the screening effects need to be considered in order to explain our experimental results. (C) 2003 Elsevier B.V. All rights reserved.
机译:我们对两种完全不同的二维电子气系统中电子密度的输运和量子寿命依赖性进行了研究。我们观察到两个散射时间都随着电子密度的增加而增加。但是,随着电子密度的增加,传输率与量子寿命的比值具有不同的趋势,这与传统理论不符。我们推测,为了解释我们的实验结果,需要考虑筛选效果。 (C)2003 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号