SPEED, HIGH VOLTAGE, AlGaAs / GaAs-heterostructure pnp-TRANSISTOR

摘要

High-speed, high-voltage, AlGaAs / GaAs - heterostructure pnp - transistor manufactured based on a multilayer GaAs - epitaxial structures for use in high frequency circuits including a high-voltage pulse technique, secondary power sources, and as a part of high-speed devices operating at high ambient temperatures .; An object of the proposed utility model is to provide a high-speed, high-AlGaAs / GaAs - heterostructure pnp - transistor providing maximum performance at relatively high operating voltages through the use of physical structure heterostructure emitter transistor and high resistance epitaxial layers.; Summary of the utility model is that the high-speed, high-voltage, AlGaAs / GaAs - heterostructure pnp - transistor has an epitaxial multilayer AlGaAs / GaAs - heterostructure ^{pp - -n - -n - -n +} -p + -p +, functioning as emitter , high-resistance base layer, providing high operating voltage, and low-resistance collector region, providing a small time overcharge collector junction capacitance. 1.