Novel T-Rail Electrodes for Substrate Removed Low-Voltage High-Speed GaAs/AlGaAs Electrooptic Modulators

摘要

A novel traveling-wave electrode utilizing capacitively loaded T-rail elements was developed for low-voltage high-speed substrate-removed GaAs/AlGaAs electrooptic modulators. Electrodes with varying dimensions were fabricated and characterized. Electrode phase velocity, characteristic impedance, loss coefficient, and capacitive loading were extracted from the measured s-parameters up to 40 GHz. Electrode was also simulated using a finite-element solver. The measured and calculated electrode capacitance values were found to be in excellent agreement, showing that the electrode can be precisely designed. Approaches were outlined to provide a group velocity-matched very high-speed modulator electrode suitable for a low drive-voltage substrate-removed GaAs/AlGaAs electrooptic modulator.