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Measurement of linear and cubic spin-orbit coupling parameters in AlGaN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas

机译:用极化诱导的二维电子气测量AlGaN / AlN / GaN异质结构中的线性和立方自旋轨道耦合参数

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摘要

Spin-orbit coupling is investigated by magneto-conductivity measurements in AlxGa1-xN/AIN/GaN heterostructures with a polarization-induced two-dimensional electron gas having a carrier density range from 0.8 x 10(12)cm(-2) to 10.6 x 10(12)cm(-2). The zero-field electron spin-splitting energies extracted from the weak antilocalization measurements are found to scale with the Fermi wavevector k(F) as 2(alpha k(F) + gamma k(F)(3)) with effective linear and cubic spin-orbit parameters of alpha = 5.0 +/- 0.3 x 10(-13) eV m(3) and gamma= 1.6 +/- 0.6x 10(-13) eV m(3), respectively. The cubic spin-orbit coupling parameter is purely due to the bulk inversion asymmetry of the wurtzite crystal and has not been previously measured for the GaN system. (C) 2007 Elsevier B.V. All rights reserved.
机译:通过磁导率测量在AlxGa1-xN / AIN / GaN异质结构中研究了自旋轨道耦合,其中极化诱导的二维电子气的载流子密度为0.8 x 10(12)cm(-2)至10.6 x 10(12)cm(-2)。发现从弱反局部测量中提取的零场电子自旋分裂能与费米波矢k(F)缩放为2(alpha k(F)+γk(F)(3)),具有有效的线性和三次方自旋轨道参数分别为alpha = 5.0 +/- 0.3 x 10(-13)eV m(3)和gamma = 1.6 +/- 0.6x 10(-13)eV m(3)。立方自旋轨道耦合参数纯粹是由于纤锌矿晶体的体相反演不对称,并且之前尚未对GaN系统进行测量。 (C)2007 Elsevier B.V.保留所有权利。

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