Method of producing GaN/AlN, GaN/AlGaN/AlN and AlGaN nitride ceramics

摘要

The scope of the notification is the production method, nitrogen nanoceramics of the types GaN/AlN, GaN/AlGaN/AlN and AlGaN, which consists of the addition of GaCl3 gallium chloride in the solvent to the freshly produced dimethylamide lithium (CH3)2, A favourable solution of hexane or hexane and diethyl ether, and separately to the newly produced lithium dimethylamide LiN(CH3)2, is added to the solvent, a favourable solution of hexane or hexane and diethyl ether in proportion to the stoichiometric chloride of AlCl3. After removing the by-products in the form of LiCl and evaporating the solvents,each reaction product is purified by sublimation at temperature 110,10 Pa and is given gallium tris(dimethylamide) [Ga(N(CH3)2)3]2 and aluminium tris(dimethylamide) [Al(N(CH3)2)3]2, which is mixed in hexane for a period of one minute to ten hours in molar proportion 1:1 and after hexane evaporation undergoes a reaction with liquid ammonia at the temperature -33oC for four hours, and then heated in the atmosphere of the flowing gas ammonia, at the temperature 800-1000oC, for a period from 1 to 20 hours. Medium crystalline nanopowder, 10-20 nm, obtained as a mixture of gallium nitrogen in the form of hexagonal h-GaN,Aluminium nitrogen in hexagonal form h-AlN and possibly aluminum-galactic nitrogen of the formula AlxGa(1-x)N, where 0,01 x 0,99, is placed in the form and sinter at temperature 600-1000-C, under pressure 3-10 GPa, for a period from one minute to ten hours, obtained by forming a mixture of GaN and AlN or a mixture of GaN and AlxGa(1-x)N, where 0,01 x 0,99 and AlN or a mixture of AlxGa(1-x)N, where 0,01 0,99.