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Comments on ‘The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure’

机译：评论'第1 ALN和第2 GAN层对ALGAN / 2ND ALN / 2ND GAN / 1ST ALN /第一个GAN结构'的性能

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Jing-Jing Dong;
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年度 2013
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1. Comments on 'The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure' [J] . Jing-Jing Dong Applied Physics . 2013,第2期

机译：关于“第一AlN和第二GaN层对AlGaN / 2nd AlN / 2nd GaN / 1st AlN / 1st GaN结构的性能的影响”的评论
2. The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure [J] . Yang Bi, XiaoLiang Wang, CuiBai Yang, Applied Physics A: Materials Science & Processing . 2011,第4期

机译：第一AlN和第二GaN层对AlGaN / 2ndAlN / 2ndGaN / 1stAlN / 1stGaN结构的性能的影响
3. The influence of the 1st A1N and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure [J] . Yang Bi, XiaoLiang Wang, CuiBai Yang, Applied Physics . 2011,第4期

机译：第一AlN和第二GaN层对AlGaN / 2ndAlN / 2ndGaN / 1stAlN / 1stGaN结构的性质的影响
4. Role of AlN spacer layer and GaN back barrier on the optoelectronic properties of AlGaN/AlN/InGaN/GaN high electron mobility transistors [C] . Payal Taya, Abhishek Chatterjee, A. Bose, DAE Solid State Physics Symposium . 2020

机译：ALN间隔层和GaN背面对AlGaN / ALN / INGAN / GAN高电子迁移率晶体管的光电性质的作用
5. Stability analysis for 1st and 2nd order soliton Raman lasers. [D] . Kalyoncu, Salih Kagan. 2010

机译：一阶和二阶孤子拉曼激光器的稳定性分析。
6. Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers [O] . Chuan-Yang Liu, Ya-Chao Zhang, Sheng-Rui Xu, 2019

机译：不同成核层的溅射AlN模板上生长的AlGaN / GaN异质结构的研究
7. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure [O] . Tülek R., Arslan E., Bayrakli A., Turhan S., Gökden S., Duygulu Ö., Kaya A.A., Firat T., Teke A., Özbay E. 2014

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响

Comments on ‘The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure’

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