Rare-Earth Elements in the Technology of III-V Compounds and Devices Based on These Compounds

摘要

The results of our studies concerned with the use of rare-earth elements in the liquid-phase epitaxial technology of the InP. InGaAsP, InGaAs, and GaP compounds and with t he fabrication of various optoelectronic and microelectronic devices and structures based on these compounds are summarized. The results related to the surface gettering of GaAs with the films of rare-earth elements in order to obtain a high-resistivity material for various purposes are also reported.