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Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
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机译:掺杂稀土元素的III-V族化合物半导体肖特基二极管及其形成的器件
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摘要
A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxide of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.
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