DC and millimeter-wave performance of watt-level barrier-intrinsic-n+ diode-grid frequency multiplier fabricated on III-V compound semiconductors

摘要

This paper reports the fabrication and millimeter-wave performance of a new class of monolithic metal-semiconductor heterostructure devices, the Barrier- Intrinsic-N+ (BIN) diode-grid frequency multipliers, which are fabricated on III-V compound semiconductors. This work also involves the measurement of the DC and low frequencyudelectrical properties of the BIN diode-grid frequency multiplier. In addition, a new analytical model which accurately describes the structure has been developed and is presented for the first time.