A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

摘要

Design parameters of epitaxially stacked tunnel-junction asymmetric separate-confinement laser heterostructures are chosen. Technological modes for fabrication of heterostructures of this kind by metal-organic chemical vapor deposition in the system of AlGaAs/GaAs/InGaAs solid solutions are found. It is demonstrated that high-efficiency GaAs:Si/GaAs:C tunnel stru ctures and asymmetric AlGaAs/GaAs/InGaAs laser heterostructures with low internal optical loss can be fabricated in a single technological process. Conditions are chosen in which a deep mesa can be formed for fabrication of mesa-stripe diode lasers based on epitaxially stacked tunnel-junction laser heterostructures. Mesa-stripe diode lasers with a 150 × 12-μm aperture have been manufactured on the basis of these structures. These samples have a threshold current density J_(th) of 96 A cm~(-2), internal optical loss α_i of 0. 82 cm~(-1), and differential resistance R = 280 mΩ. Samples containing three laser structures have a slope efficiency of 3 W A~(-1) and a maximum peak output power of 250 W in the pulsed operation mode (100 ns, 1 kHz).