Dep level study of as-grown and ion implanted bulk and MOCVD grown epitaxial 6H-SiC

摘要

Deep level transient spectroscopy measurements from 100 to 800 K were made on n-and p-type 6H-SiC implanted with Cr and Mg. Acceptor levels at E_c-0.236 and E_c-0.195 eV in n-material have been tentatively assigned to substitutional Cr residing at inequivalent (h,k) lattice sites. A Mg specific level has been determined to be located at E_c-0.510 eV. However, site inequivalences are not observed for this center possibly indicating an extended defect or complex. P-type implanted material is observed to contain several damage-related deep levels including an intrinsic level at E_v+0.982 eV, but Cr- or Mg- impurity related hole trap levels were not observed in the lower portion of the band gap.