PEARSON-IV TYPE DOPING DISTRIBUTION-BASED ANALYTICAL MODELING OF DUAL-MATERIAL DOUBLE-GATE FULLY-DEPLETED SILICON-ON-INSULATOR MOSFET

摘要

A new two-dimensional model for dual material double gate fully depleted SOI MOSFET is presented. An investigation of potential distribution in the silicon film is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. The proposed structure is such that the work function of the gate metal (both sides) near the source is higher than the one near the drain. The analytical model so developed shows a step-function in the potential along the channel, which screens the drain potential variation by the gate near the drain thereby suppressing the short channel effects (SCEs). The results predicted by the model are compared with those obtained by 2-D device simulator ATLAS to verify the accuracy of the proposed model.