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Uniformly doped source/drain junction in a double-gate MOSFET
Uniformly doped source/drain junction in a double-gate MOSFET
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机译:双栅极MOSFET中均匀掺杂的源极/漏极结
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摘要
Multiple dopant implantations are performed on a FinFET device to thereby distribute the dopant in a substantially uniform manner along a vertical depth of the FinFET in the source/drain junction. Each of the multiple implantations may be performed at different tilt angles.
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