Gas-source MBE growth of a long-wavelength material and its application to semiconductor lasers

摘要

Work is underway on the development of Group Ill-V optical and electronic devices using gas-source molecular-beam epitaxy (GSMBE), an extension of molecular-beam epitaxy in which the Group V are gas-source (AsH{sub}3, PH{sub}3). High uniformity of composition and thickness has been achieved by optimizing the position and conditions of growth. In considering the application of GSMBE to 1.3μm MQW lasers, n-type modulation-doped MQW lasers using lnAsP multi-quantum wells were studied, since GSMBE issuited to the doping of extremely restricted regions. Using a laser selectively n-doped to 1×10{sup}18cm{sub}(-3) at optimized growth temperature, with a cavity length of 1200μm, the extremely low threshold current density J{sub}th of 250 A/cm{sup}2 was achieved. This has for the first time confirmed the superiority of GSMBE for selective n-doping with respect to threshold current density.