Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

摘要

We have studied the effects on N incorporation in Ga(In)P and explored their applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (100) GaP substrates by gas-source MBE using an RF nitrogen radical beam source. Red LEDs based on GaN_0.011P_0.989/GaP double-heterostructure grown on (100) GaP substrates were successfully fabricated. Compared to conventional A1GaInP LEDs, this LED eliminates etching of the GaAs substrate and wafer-bonding of a transparent GaP substrate. Partially relaxed GaN_0.011P_0.989 active layers, however, degraded the emission efficiency. Incorporation of In in GaN_0.015P_0.985 alloy to lattice-match to GaP not only maintains the direct band gap, but also improves the sample structural quality and increases the integrated PL intensity by 40/100, compared to GaN_0.985.