Fabrication and Characterization of Dense PZT Thick Films Using Continuous Wave CO_2 Laser Annealing

摘要

Ferroelectric Pb{Zr_(0.52)Ti_(0.48))O_3{PZT) thick films of different thickness were successfully prepared on Pt/Ti/SiO_2/Si and LSMO/SUS430 substrates using powder-mixing and sol-gel spin coating process. Films on two different types of substrates were fabricated and annealed using low temperature continuous-wave CO_2 laser. X-ray diffraction analysis indicated that the PZT films mainly had a perovskite-type structure with (110) preferred orientation. PZT thick films of type-I substrate show cracks, whereas uniform and dense microstructure is obtained with the films of type-II. Type-II thick films had shown lower leakage current density f approx 10~(-9) A/cm~2) than the type-I thick films (approx 10~(-6) A/cm~2). Moreover, the dielectric constant is found to be higher in type-II thick films. PZT thick films of type-II, grown on LSMO/SUS430 substrate show a further decrease in leakage current, indicating that the LSMO layer resist the inter-diffusion of elements from the metallic substrate to the PZT materials.