首页> 外国专利> Highly dense PZT-PMnN piezoelectic thick film and preparation method thereof

Highly dense PZT-PMnN piezoelectic thick film and preparation method thereof

机译:高密度pzt-pmnn压电厚膜及其制备方法

摘要

The present invention relates to a piezoelectric PZT-PMnN dense thick film and a method, in particular the surface of the substrate Pb with a perovskite-like on one side (Zr, Ti) O 3 and Pb (Mn 1/3 Nb 2/3 ) O 3 of the solid solution composed of piezoelectric material to a room temperature vacuum powder spraying (Room Temperature Powder Spray in Vacuum) by vacuum deposition and a method of manufacturing a piezoelectric thick film is about. According to the present invention, at room temperature using a vacuum spraying powder having a perovskite phase, and tightly film formation at a high density, cracking or pore formation is not present and the thickness of more than 5 sound to a substrate without peeling from the substrate is attached, it is possible to manufacture a piezoelectric thick film PZT-PMnN showing a piezoelectric sensor and piezoelectric properties of the equivalent bulk is conventionally used, the thin film in the electronic products in the trend of frivolous digestion stage / may be applied to a thick film-type piezoelectric sensor.
机译:压电PZT-PMnN致密厚膜及其方法技术领域本发明涉及压电PZT-PMnN致密厚膜及其方法,尤其涉及在一侧具有(Zr,Ti)O 3 和Pb的钙钛矿状的基板Pb的表面。 Mn 1/3 Nb 2/3 )O 3 由压电材料组成的固溶体进行室温真空粉末喷涂(室温关于通过真空沉积的真空中的粉末喷雾和制造压电厚膜的方法。根据本发明,在室温下使用具有钙钛矿相的真空喷涂粉末,并且在高密度下紧密地成膜,不存在龟裂或孔形成,并且厚度大于5的声音在基板上没有从基板上剥离。贴附有基板的情况下,可以制造出具有压电传感器的压电厚膜PZT-PMnN,并且通常使用等效体积的压电特性,因此,在电子产品的薄膜中,易消化阶段的趋势/可以应用于厚膜型压电传感器。

著录项

  • 公开/公告号KR101091149B1

    专利类型

  • 公开/公告日2011-12-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090075132

  • 发明设计人 류정호;박동수;

    申请日2009-08-14

  • 分类号C23C24/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:01

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